2.3 0.60 +0.1 -0.1 6.50 +0.15 -0.15 1.50 +0.15 -0.15 0.80 +0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30 +0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.15 2.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3 .8 0 to-252 unit: mm 1 base 2 collector 3 emitter 2SB906 features low collector saturation voltage. high power dissipation. absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo -60 v collector-emitter voltage v ceo -60 v emitter-base voltage v ebo -7 v collector current i c -3 ma base current i b -0.5 ma collector power dissipation p c 1mw junction temperature tj 150 storage temperature range t stg -55to+150 electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector cut-off current i cbo v cb =-60v,i e = 0 -100 a emitter cut-off current i ebo v eb =-7v,i c = 0 -100 a collector-emitter breakdown voltage v (br)ceo i c =-50ma, i b =0 -60 v v ce =-5v,i c = -0.5 a 60 200 v ce =-5v,i c =-3a 20 collector-emitter saturation voltage v ce (sat) i c =-3a,i b =-0.3a -1 -1.7 v base-emitter voltage v be v ce =-5v,i c =-0.5 a -1 -1.5 v transition frequency f t v ce =-5v,i c =-0.5 a 9 mhz collector output capacitance c ob v cb = -10v, i e = 0, f = 1 mhz 150 pf turn-on time t on 0.4 s storage time t stg 1.7 s fall time t f 0.5 s -i b1 =i b2 =0.2a,v cc =-30v,duty cycle1% dc current gain h fe h fe classification rank o y hfe 60 120 100 200 product specification sales@twtysemi.com 1 of 1 http://www.twtysemi.com 4008-318-123
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